Title :
Control-based high-speed direct mask fabrication for lithography via mechanical plowing
Author :
Zhihua Wang ; Jun Tan ; Qingze Zou ; Wei Jiang
Author_Institution :
Dept. of Mech. & Aerosp. Eng., Rutgers, State Univ. of New Jersey, Piscataway, NJ, USA
Abstract :
Mechanical indentation and plowing is one of the most widely used methods in AFM nanolithography. Compared to other probe-based AFM nanolithography techniques such as the Dip-pen and the milliped, mechanical plowing is not restrictive to conductive materials and/or soft materials. However, like other probe-based nanolithgraphy techniques, the low-throughput has hindered the implementation of this technique in practices. In this paper, a recently-developed iterative learning control technique is utilized to account for the adverse effects encountered in high-speed, large-range mechanical plowing nanolithography, including the hysteresis, the vibrational dynamics, and the cross-axis dynamics-coupling effects. This approach is implemented to directly fabricate patterns on a mask consisting of a nickel layer sandwiched between an aluminum layer on the top and a silicon dioxide substrate on the bottom. The experimental results demonstrated that a relatively large-size pattern of four grooves (20 μm in length) can be fabricated at a high-speed of ~3.8 mm/sec, with the line width and line depth at ~80 nm and 5 nm, respectively.
Keywords :
adaptive control; aluminium; atomic force microscopy; hysteresis; indentation; iterative methods; learning systems; masks; nanolithography; nickel; vibrations; AFM nanolithography; Al-Ni-SiO2; SiO2; aluminum layer; control-based high-speed direct mask fabrication; cross-axis dynamic-coupling effects; high-speed large-range mechanical plowing nanolithography; hysteresis; iterative learning control technique; line depth; line width; mechanical indentation; nickel layer; silicon dioxide substrate; vibrational dynamics; Couplings; Dynamics; Heuristic algorithms; Nanolithography; Probes; Trajectory;
Conference_Titel :
American Control Conference (ACC), 2013
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4799-0177-7
DOI :
10.1109/ACC.2013.6580644