Intrinsic switching variability in HfO2 RRAM

Author

Fantini, Andrea ; Goux, L. ; Degraeve, Robin ; Wouters, D.J. ; Raghavan, N. ; Kar, G. ; Belmonte, A. ; Chen, Ying-Yu ; Govoreanu, B. ; Jurczak, Malgorzata

Author_Institution

IMEC, Leuven, Belgium

fYear

2013

fDate

26-29 May 2013

Firstpage

30

Lastpage

33

Abstract

In this work, we present a systematic electrical characterization of TiNHfO₂HfTiN RRAM elements from the variability perspective. Variability of both programmed resistance values and switching triggering voltages has been evaluated on small scaled cells in a wide operating current range (2μA till 500μA´s), for different oxide stacks, in DC and pulsed conditions. For the first time device-to-device and cycle-to-cycle variability are thoroughly compared as well as the impact of different oxygen vacancy profiles. Increase of variability in low current operation is also elucidated.

Keywords

hafnium compounds; random-access storage; titanium compounds; trigger circuits; DC condition; RRAM elements; TiN-HfO₂-Hf-TiN; along systematic electrical characterization; cycle-to-cycle variability; device-to-device variability; intrinsic switching variability; oxide stacks; pulsed condition; switching triggering voltage; wide operating current range; Dispersion; Fluctuations; Hafnium compounds; Integrated circuits; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2013 5th IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6168-2

Type

conf

DOI

10.1109/IMW.2013.6582090

Filename

6582090