• DocumentCode
    631488
  • Title

    Stability conditioning to enhance read stability 10x in 50nm AlxOy ReRAM

  • Author

    Iwasaki, Tomoko Ogura ; Sheyang Ning ; Takeuchi, Ken

  • Author_Institution
    Chuo Univ., Tokyo, Japan
  • fYear
    2013
  • fDate
    26-29 May 2013
  • Firstpage
    44
  • Lastpage
    47
  • Abstract
    This study focuses on read stability after reset in 50nm AlxOy ReRAM. Unstable behaviors are characterized and a 2-part solution to reduce instability from 64 to 6% and read error from 8 to 0.2% is proposed. After conventional reset including verify, (i) a block-level low voltage sealing operation is followed by (ii) a stability check loop.
  • Keywords
    aluminium compounds; random-access storage; AlxOy; ReRAM; block-level low voltage sealing operation; instability reduction; read stability; size 50 nm; stability check loop; stability conditioning; Electrical resistance measurement; Error analysis; Proposals; Resistance; Seals; Stability criteria; Switches; RTN; ReRAM; read instability; relaxation; stability check; stability verify;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2013 5th IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4673-6168-2
  • Type

    conf

  • DOI
    10.1109/IMW.2013.6582094
  • Filename
    6582094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=631488