DocumentCode :
631488
Title :
Stability conditioning to enhance read stability 10x in 50nm AlxOy ReRAM
Author :
Iwasaki, Tomoko Ogura ; Sheyang Ning ; Takeuchi, Ken
Author_Institution :
Chuo Univ., Tokyo, Japan
fYear :
2013
fDate :
26-29 May 2013
Firstpage :
44
Lastpage :
47
Abstract :
This study focuses on read stability after reset in 50nm AlxOy ReRAM. Unstable behaviors are characterized and a 2-part solution to reduce instability from 64 to 6% and read error from 8 to 0.2% is proposed. After conventional reset including verify, (i) a block-level low voltage sealing operation is followed by (ii) a stability check loop.
Keywords :
aluminium compounds; random-access storage; AlxOy; ReRAM; block-level low voltage sealing operation; instability reduction; read stability; size 50 nm; stability check loop; stability conditioning; Electrical resistance measurement; Error analysis; Proposals; Resistance; Seals; Stability criteria; Switches; RTN; ReRAM; read instability; relaxation; stability check; stability verify;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
Type :
conf
DOI :
10.1109/IMW.2013.6582094
Filename :
6582094
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=631488
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