On disturb immunity and P/E kinetics of Sb-doped GeS2/Ag conductive bridge memories

This work investigates the resistance switching dynamics of GeS₂-based CBRAM devices under a large range of voltage levels to address SET, RESET, disturb and retention regimes. We studied GeS₂ and Sb-doped GeS₂ 1T-1R devices with Ag top electrode. We demonstrated that Sb doping improves SET speed to 30ns at 2.2V and 10 years disturb immunity at -0.3V without degrading RESET performances. We claim that the switching kinetics at low and high fields are governed by different physical mechanisms, allowing to improve independently the SET/RESET and disturb memory features.