Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology

Author

Udayakumar, K.R. ; San, T. ; Rodriguez, Jose ; Chevacharoenkul, S. ; Frystak, D. ; Rodriguez-Latorre, J. ; Zhou, Changle ; Ball, M. ; Ndai, P. ; Madan, S. ; McAdams, H. ; Summerfelt, S. ; Moise, T.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

2013

fDate

26-29 May 2013

Firstpage

128

Lastpage

131

Abstract

An embedded 448kb 2T-2C FRAM, integrated into a 180nm analog process flow, has been developed and qualified for more than 10years data retention at 125°C. Key electrical characteristics of the memory include wide signal margins with no outlier bits, high endurance write/read cycling (>>10¹⁵ cycles), stable retention (>>10yrs at 125°C), and extremely low bit error rate following 260°C Pb-free solder board-attach reflow. Results suggest that the technology can find wide use in applications ranging from consumer electronics to automotive where highly reliable embedded memory and analog components are required.

Keywords

CMOS analogue integrated circuits; CMOS memory circuits; circuit stability; consumer electronics; error statistics; ferroelectric storage; integrated circuit reliability; low-power electronics; random-access storage; reflow soldering; solders; Pb-free solder board-attach reflow; analog friendly CMOS technology; analog process flow; bit error rate; consumer electronics; data retention; electrical characteristics; embedded 2T-2C FRAM; endurance write-read cycling; low-power ferroelectric random access memory embedded; outlier bit; reliability; retention stability; signal margin; size 180 nm; storage capacity 448 Kbit; temperature 125 degC; temperature 260 degC; CMOS integrated circuits; Capacitors; Ferroelectric films; Nonvolatile memory; Random access memory; Reliability; Stress; 180nm analog CMOS; Ferroelectric; PZT; non-volatile memory; process integration; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2013 5th IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6168-2

Type

conf

DOI

10.1109/IMW.2013.6582115

Filename

6582115