Title :
Increasing VG-type 3D NAND flash cell density by using ultra-thin poly-silicon channels
Author :
Teng-Hao Yeh ; Pei-Ying Du ; Tzu-Hsuan Hsu ; Wei-Chen Chen ; Hang-Ting Lue ; Yen-Hao Shih ; Yu-De Huang ; Han-Hui Hsu ; Lo-Yueh Lin ; Ya-Chin King ; Tahone Yang ; Chih-Yuan Lu
Author_Institution :
Macronix Emerging Central Lab., Macronix Int. Co. Ltd., Hsinchu, Taiwan
Abstract :
Z-direction pitch (stacking period) scaling is critical to the ultimate number of stacking of 3D NAND Flash. In this work, we study the ultra-thin (<;10nm) poly-Si channel together with a thinner inter-poly oxide for Vertical Gate (VG)-type 3D NAND Flash. For the first time, the Z pitch is successfully scaled to 18nm and the memory cell still provides adequate performance. The impact of the Z pitch on the P/E memory window, Z disturb, and read current are studied extensively.
Keywords :
NAND circuits; flash memories; silicon; P-E memory window; VG-type 3D NAND flash cell density; Z-direction pitch scaling; memory cell; read current; size 18 nm; stacking period scaling; thinner interpoly oxide; ultra-thin poly Si channel; ultra-thin poly-silicon channels; vertical gate-type 3D NAND flash; Arrays; Flash memories; Logic gates; Performance evaluation; Programming; Stacking; Very large scale integration; BE-SONOS; VG-type 3D NAND Flash; charge trapping; ultra-thin TFT device;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582118
