• DocumentCode
    631504
  • Title

    A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT

  • Author

    Nagatsuka, S. ; Matsuzaki, Takaomi ; Inoue, H. ; Ishizu, Takahiko ; Onuki, Tatsuya ; Ando, Y. ; Nei, Kato ; Miyairi, Hidekazu ; Atsumi, T. ; Shionoiri, Y. ; Kato, Kazuhiko ; Okuda, Takafumi ; Koyama, Jun ; Yamazaki, Shumpei

  • Author_Institution
    Semicond. Energy Lab. Co., Ltd., Atsugi, Japan
  • fYear
    2013
  • fDate
    26-29 May 2013
  • Firstpage
    188
  • Lastpage
    191
  • Abstract
    A 3bit/cell nonvolatile oxide semiconductor RAM (NOSRAM) test die comprising c-axis aligned crystal In-Ga-Zn-O TFTs has been fabricated. The write time of the test die is 100 ns. The test die collectively reads multilevel data within 900 ns with a 3bit A/D converter serving as reading circuit. The endurance of the 3bit/cell NOSRAM cell is more than 1012 cycles.
  • Keywords
    analogue-digital conversion; gallium compounds; indium compounds; random-access storage; thin film transistors; zinc compounds; A/D converter; In-Ga-Zn-O; NOSRAM; crystalline TFT; nonvolatile memory; nonvolatile oxide semiconductor RAM; reading circuit; Arrays; Capacitors; Nonvolatile memory; Power supplies; Random access memory; Thin film transistors; Writing; 3bit/cell; CMOS; In-Ga-Zn-O; RAM; TFT; capacitor; nonvolatile;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2013 5th IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4673-6168-2
  • Type

    conf

  • DOI
    10.1109/IMW.2013.6582131
  • Filename
    6582131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=631504