Title :
A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT
Author :
Nagatsuka, S. ; Matsuzaki, Takaomi ; Inoue, H. ; Ishizu, Takahiko ; Onuki, Tatsuya ; Ando, Y. ; Nei, Kato ; Miyairi, Hidekazu ; Atsumi, T. ; Shionoiri, Y. ; Kato, Kazuhiko ; Okuda, Takafumi ; Koyama, Jun ; Yamazaki, Shumpei
Author_Institution :
Semicond. Energy Lab. Co., Ltd., Atsugi, Japan
Abstract :
A 3bit/cell nonvolatile oxide semiconductor RAM (NOSRAM) test die comprising c-axis aligned crystal In-Ga-Zn-O TFTs has been fabricated. The write time of the test die is 100 ns. The test die collectively reads multilevel data within 900 ns with a 3bit A/D converter serving as reading circuit. The endurance of the 3bit/cell NOSRAM cell is more than 1012 cycles.
Keywords :
analogue-digital conversion; gallium compounds; indium compounds; random-access storage; thin film transistors; zinc compounds; A/D converter; In-Ga-Zn-O; NOSRAM; crystalline TFT; nonvolatile memory; nonvolatile oxide semiconductor RAM; reading circuit; Arrays; Capacitors; Nonvolatile memory; Power supplies; Random access memory; Thin film transistors; Writing; 3bit/cell; CMOS; In-Ga-Zn-O; RAM; TFT; capacitor; nonvolatile;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582131
