Title :
Some physical problems in the preparation and analysis of the heavily boron and phosphorous doped polysilicon thin films
Author :
Ocko, M. ; Zonja, S. ; Ivanda, M.
Author_Institution :
Inst. of Phys., Zagreb, Croatia
Abstract :
We discuss problems in the preparation and analysis of the solid solution phase in the case of heavily phosphorus and boron doped polycrystalline silicon. Some currently used methods and the technology of polysilicon thin films preparation are presented. Based on and afore these discussions, we propose a process of preparation of a good quality heavily boron and phosphorus doped silicon thin film samples. The characterisation, with some new methods of characterisations, and the investigation of the stability of such obtained samples are presented. It was also indicated that the problem of the determination of the current carrier concentration is not yet solved even in the heavily doped, metallic, regime in polysilicon.
Keywords :
boron; carrier density; elemental semiconductors; phosphorus; plasma CVD; semiconductor doping; semiconductor thin films; silicon; solid solutions; Si:B; Si:P; carrier concentration; heavily boron doped polysilicon thin films; heavily phosphorous doped polysilicon thin films; solid solution phase; Annealing; Boron; Conductivity; Hall effect; Silicon; Temperature;
Conference_Titel :
Information & Communication Technology Electronics & Microelectronics (MIPRO), 2013 36th International Convention on
Conference_Location :
Opatija
Print_ISBN :
978-953-233-076-2