Title :
Luminescence, Raman and synchrotron XPS study of amorphous Ge2S3 based films
Author :
Mitsa, V. ; Ivanda, M. ; Gamulin, Ozren ; Holomb, R. ; Kondrat, O. ; Popovych, N. ; Lovas, G. ; Petreckiy, S. ; Tsud, N. ; Matolin, V. ; Prince, K.C.
Author_Institution :
Inst. for Solid State Phys. & Chem., Uzhhorod Nat. Univ., Uzhhorod, Ukraine
Abstract :
Ge2S3-based films have been investigated using Raman, photoluminescence and photoemission spectroscopy. For the sake of comparison some of the photoluminescent properties of bulk glasses have been used. The synchrotron photoelectron spectroscopy (SRPES) and XPS spectra of a-Ge2S3 films have been measured after the illumination and annealing. The changes in the parameters of the film´s core levels induced by near or above band gap light and thermal treatment are discussed in the paper. We consider the possibility that the PL radiation in Ge2S3-based films is a surface contaminant effect from native oxidized layer, which might have formed in the air.
Keywords :
Raman spectra; X-ray photoelectron spectra; annealing; chalcogenide glasses; core levels; energy gap; germanium compounds; photoluminescence; semiconductor thin films; surface contamination; Ge2S3; Raman spectra; SRPES; amorphous films; annealing; band gap; core levels; illumination; light treatment; native oxidized layer; photoemission spectroscopy; photoluminescence; surface contaminant; synchrotron XPS; synchrotron photoelectron spectroscopy; thermal treatment; Annealing; Films; Glass; Laser excitation; Lighting; Optical filters; Surface treatment;
Conference_Titel :
Information & Communication Technology Electronics & Microelectronics (MIPRO), 2013 36th International Convention on
Conference_Location :
Opatija
Print_ISBN :
978-953-233-076-2
