High power operation at high temperature of AlGaInAs/InP widely tunable BH laser

Author

Wakaba, M. ; Iwai, N. ; Kiyota, Kyohei ; Hasegawa, Hiroshi ; Kurobe, T. ; Kobayashi, Go ; Kaji, E. ; Kobayakawa, M. ; Kimoto, Tatsuya ; Yokouchi, N. ; Kasukawa, A.

Author_Institution

Yokohama R&D Labs., Furukawa Electr. Co., Ltd., Yokohama, Japan

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

1

Lastpage

2

Abstract

We fabricated high performance 1550 nm widely tunable lasers which are integrated 12-channel DFB laser array and SOA with buried-heterostructure configuration based on the AlGaInAs/InP system. We investigated the lasing performance at high temperature of the widely tunable laser. The output power as high as 90 mW at a temperature of 70 °C was achieved, which is the highest output power ever reported to our best knowledge.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; integrated optoelectronics; laser beams; laser tuning; optical fabrication; semiconductor laser arrays; semiconductor optical amplifiers; AlGaInAs-InP; SOA; buried-heterostructure configuration; high power operation; high temperature operation; integrated 12-channel DFB laser array; laser output power; lasing performance; power 90 mW; temperature 70 degC; tunable BH laser; wavelength 1550 nm; Indium phosphide; Laser tuning; Power generation; Power lasers; Semiconductor optical amplifiers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th

Conference_Location

Kyoto

Type

conf

Filename

6597331