DocumentCode
63329
Title
Impacts of Post-Treatments on Cell Performance of CIGS Solar Cells With Zn-Compound Buffer Layers
Author
Nakada, Tokio ; Kobayashi, Taizo ; Kumazawa, Toyokazu ; Yamaguchi, Hiroshi
Author_Institution
Aoyama Gakuin Univ., Sagamihara, Japan
Volume
3
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
461
Lastpage
466
Abstract
The postdeposition treatments, such as ammonia rinsing, light soaking, and heat light soaking on cell performances of Cu(In,Ga)Se2 (CIGS) solar cells with Zn-compound buffer layers, are investigated. The impacts of these treatments are discussed in connection with the band alignment at the transparent conducting oxide (TCO)/buffer/CIGS interface. Three types of CIGS solar cells with sputter-deposited ZnO:Al/CBD-ZnS(O,OH), MOCVD-ZnO:B/CBD-ZnS(O,OH), and MOCVD-ZnO:B/ALD-Zn(O,S) are investigated in this paper. The importance of the combination of buffer/TCO materials and deposition processes is discussed. We demonstrate that the adjustment of an S/(S+O) atomic ratio relevant to the band alignment at the buffer/CIGS interface is critical to achieve high-efficiency CIGS solar cells with Zn-compound buffer layer.
Keywords
II-VI semiconductors; MOCVD; annealing; buffer layers; copper compounds; gallium compounds; indium compounds; semiconductor growth; solar cells; sputter deposition; ternary semiconductors; wide band gap semiconductors; zinc compounds; Cu(InGa)Se2; Zn(OS)-ZnO:Al; Zn-compound buffer layers; ZnS(OOH)-ZnO:Al; ZnS(OOH)-ZnO:B; ammonia rinsing; atomic ratio adjustment; band alignment; buffer-transparent conducting oxide materials; cell performance; deposition processes; heat light soaking; high-efficiency CIGS solar cells; post-deposition treatments; transparent conducting oxide-buffer-CIGS interface; Annealing; Atomic layer deposition; Buffer layers; Lighting; Photovoltaic cells; Zinc oxide; Air-annealing; Cu(In,Ga)Se$_{2}$ CIGS solar cell; ZnS(O,OH) buffer layer; ammonia rinsing; heat light soaking (HLS); light soaking (LS);
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2012.2223456
Filename
6341031
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