Title :
Intersubband all-optical switch with bandgap control of InGaAs/AlAsSb quantum wells
Author :
Jijun Feng ; Akimoto, Ryoichi ; Gozu, Shin-ichiro ; Mozume, Teruo ; Hasama, Toshifumi ; Ishikawa, Hiroshi
Author_Institution :
Network Photonics Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
Bandgap control of ion-induced intermixing on InGaAs/AlAsSb coupled double quantum wells is studied. Moreover, a monolithic all-optical Michelson interferometer gating switch integrated with two different bandgap energies is developed based on the area-selective method.
Keywords :
III-V semiconductors; Michelson interferometers; aluminium compounds; energy gap; gallium arsenide; indium compounds; optical switches; semiconductor quantum wells; InGaAs-AlAsSb; InGaAs-AlAsSb coupled double quantum wells; bandgap control; gating switch; intersubband all-optical switch; ion-induced intermixing; monolithic all-optical Michelson interferometer; Indium gallium arsenide; Ion implantation; Modulation; Optical switches; Photonic band gap; Photonics;
Conference_Titel :
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location :
Kyoto
