DocumentCode :
633394
Title :
Over 25,000 hours operation of 1060 nm vertical cavity surface emitting lasers
Author :
Kamiya, Shinichiro ; Kise, Tomofumi ; Funabashi, Masaki ; Suzuki, Takumi ; Imamura, Akiyuki ; Hiraiwa, K. ; Nakamura, T. ; Shimizu, Hiroshi ; Ishikawa, Takaaki ; Kasukawa, A.
Author_Institution :
Reliability First Group, Furukawa Electr. Co., Ltd., Yokohama, Japan
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
High reliability, high transmission speed and low power consumption laser diodes are required for optical interconnect. We have developed 1060 nm Vertical Cavity Surface Emitting Lasers (VCSELs) with InGaAs/GaAs strained quantum wells, oxide-confined and double intracavity structures for the requirement. In this paper, an extremely long term aging test close to the actual operating temperature was performed in condition of 90°C and 6 mA. No degradation of optical power and threshold current has been observed up to 26,500 hours (3 years). The aging duration is equivalent to 80 years at 40°C and 10 years at 70°C using Ea = 0.7 eV. It indicates that our 1060 nm VCSELs can operate for the long duration.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum wells; surface emitting lasers; InGaAs-GaAs; aging duration; double intracavity structures; high reliability; high transmission speed; laser diodes; low power consumption; oxide-confined structures; strained quantum wells; vertical cavity surface emitting lasers; wavelength 1060 nm; Aging; Cavity resonators; Gallium arsenide; Optical interconnections; Power demand; Reliability; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location :
Kyoto
Type :
conf
Filename :
6597529
Link To Document :
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