Title :
Potential-tailored strained InGaAs quantum well for polarization-dependent optical switch
Author :
Tominaga, H. ; Noh, Joo-Hyong ; Arakawa, Takeshi
Author_Institution :
Grad. Sch. of Eng., Yokohama Nat. Univ., Yokohama, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
We propose a strained InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) for polarization-independent optical switches. A potential-tailored QW structure with combination of the strained FACQWs and asymmetric CQWs is also investigated for actual devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical switches; semiconductor quantum wells; InGaAs-InAlAs; five-layer asymmetric coupled quantum well; polarization-dependent optical switch; polarization-independent optical switches; potential-tailored strained quantum well; Electric fields; Indexes; Indium gallium arsenide; Optical switches; Optical waveguides; Photonics;
Conference_Titel :
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location :
Kyoto
