Application of photoemission microscopy (PEM) and Computer Aided Design (CAD) navigation system in localization of high side power switch open contact failure

Author

Lee Nean Sern

Author_Institution

Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia

fYear

2013

fDate

15-19 July 2013

Firstpage

83

Lastpage

86

Abstract

Photoemission microscopy (PEM) combined with Computer Aided Design (CAD) navigation system are very effective methods for fault localization on complex integrated circuit (IC) consisting of digital, analog and power devices elements. In this paper, both of these methods are applied in analyzing a high side power switch diagnostic function failure.

Keywords

CAD; electrical contacts; electronic engineering computing; failure analysis; switches; CAD navigation system; PEM; analog device element; complex IC; complex integrated circuit; computer aided design; digital device element; fault localization; high-side power switch diagnostic function failure; high-side power switch open contact failure localization; photoemission microscopy; power device element; Design automation; Failure analysis; Integrated circuits; Navigation; Photoelectricity; Radiative recombination; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599131

Filename

6599131