Title :
Application of photoemission microscopy (PEM) and Computer Aided Design (CAD) navigation system in localization of high side power switch open contact failure
Author_Institution :
Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia
Abstract :
Photoemission microscopy (PEM) combined with Computer Aided Design (CAD) navigation system are very effective methods for fault localization on complex integrated circuit (IC) consisting of digital, analog and power devices elements. In this paper, both of these methods are applied in analyzing a high side power switch diagnostic function failure.
Keywords :
CAD; electrical contacts; electronic engineering computing; failure analysis; switches; CAD navigation system; PEM; analog device element; complex IC; complex integrated circuit; computer aided design; digital device element; fault localization; high-side power switch diagnostic function failure; high-side power switch open contact failure localization; photoemission microscopy; power device element; Design automation; Failure analysis; Integrated circuits; Navigation; Photoelectricity; Radiative recombination; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599131
