DocumentCode :
633845
Title :
Fast 3D tomography at package level by using Xe plasma focused ion beam
Author :
Hrncir, T. ; Hladik, L. ; Zadrazil, M.
Author_Institution :
TESCAN a.s., Brno, Czech Republic
fYear :
2013
fDate :
15-19 July 2013
Firstpage :
112
Lastpage :
115
Abstract :
Xe plasma FIB offers the milling rate at least 50 times higher than common Ga FIB. This makes many failure analysis tasks much faster, or the analysed volume might increase, while keeping the analysis time. 3D tomography by FIB-SEM takes advantage of this; results at the increased volume are demonstrated. The solder bump with the diameter of 100 pm was analysed and 3D tomography was performed by slicing the bump by FIB and imaging the slices by SEM. The distinct material contrast of the slices on backscattered electron images allowed to perform 3D reconstruction with the sufficient resolution and to resolve the different materials in the bump and their interfaces clearly.
Keywords :
electron backscattering; electronics packaging; failure analysis; focused ion beam technology; gallium; image reconstruction; milling; scanning electron microscopy; solders; tomography; xenon; 3D reconstruction; FIB-SEM; Xe; backscattered electron images; bump slicing; failure analysis; fast 3D tomography; material contrast; milling rate; package level; plasma focused ion beam; scanning electron microscopy; size 100 pm; solder bump; Failure analysis; Image resolution; Materials; Milling; Plasmas; Tomography; Visualization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
ISSN :
1946-1542
Print_ISBN :
978-1-4799-1241-4
Type :
conf
DOI :
10.1109/IPFA.2013.6599137
Filename :
6599137
Link To Document :
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