Stress evolution on tungsten thin-film of an open through silicon via technology

We have studied the stress evolution in the tungsten film of a particular open TSV technology during the thermal processing cycle. The film is attached to the via´s wall and some plasticity is expected in the metal due to the temperature variation. Our work introduces a stress model for thin-films utilizing the traditional mechanical FEM approach. The results reveal potential reliability issues and a specific evolution of the stress in the tungsten layer.