Title :
Reliability comparison on self-aligned via and punch-through via etch methods of hard-mask based Cu/ultra low-k interconnects
Author :
Jie Zhou ; Zhenghao Gan ; Minda Hu ; Fanfei Bai ; Lei Zhou
Author_Institution :
Technol. R&D, Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
In this paper reliability performance of two all-in-one etch methods, self-aligned via (SAV) and punch-through (PT), has been investigated in detail. The breakdown voltage (Vbd) has been dramatically improved with the SAV etch method. However, electromigration (EM) performance has showed ~50% degradation. On the other hand, no degradation was found in stress migration (SM) performance. The underlying mechanisms for the reliability difference are detailed.
Keywords :
copper; electric breakdown; electromigration; etching; low-k dielectric thin films; masks; reliability; vias; Cu; EM performance; PT etch method; SAV etch method; SM performance; breakdown voltage; electromigration performance; hard-mask based copper-ultra low-k interconnects; punch-through via etch method; reliability comparison; reliability difference; reliability performance; self-aligned via etch method; stress migration performance; Degradation; Dielectrics; Integrated circuit interconnections; Metals; Reliability; Stress; Weibull distribution; Self align via (SAV); punch through (PT);
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599157
