Title :
A sample preparation technique to reveal the implant profile by TEM for IC failure analysis
Author :
Ming Li ; Chien, Wei-ting Kary ; Shuqing Duan
Author_Institution :
Semicond. Manuf. Int. (Shanghai) Corp., Shanghai, China
Abstract :
In the TEM image of a MOS device prepared by the traditional TEM sample preparation method, the junction profile cannot be displayed. In this paper, a TEM sample preparation technique was introduced to directly observe the junction profile by TEM. Using this technique, the junction profiles of LDD and Source/Drain of a MOS device can be clearly displayed in the TEM images. To demonstrate the application of this technique in failure analysis, case studies about the implant issue induced device fail were also reported.
Keywords :
MIS devices; failure analysis; integrated circuit reliability; ion implantation; specimen preparation; IC failure analysis; LDD; MOS device; TEM images; implant profile; ion implantation; junction profiles; lightly doped drain; sample preparation technique; source-drain; transmission electron microscope; Analytical models; Decision support systems; Failure analysis; Integrated circuit modeling; Mathematical model; TEM; defect; failure analysis; implant profile; integrated circuit; sample preparation;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599160
