Title :
Reliability evaluation and failure analysis of AlGaN/GaN high electron mobility transistor by photo emission microscope
Author :
Yuansheng Wang ; Xiao Hong ; Chang Zeng ; Ping Lai ; Yun Huang
Author_Institution :
Guangdong Univ. of Technol., Guangzhou, China
Abstract :
In this paper, the reliability in AlGaN/GaN HEMTs has been assessed by analyzing the spatial intensity distribution of electroluminescence (EL) detected by Photo Emission Microscope (PEM) during the OFF-state step-stress experiment. And it is found that a relationship between breakdown point and hot spots was confirmed. In addition, we report on the different of EL image before and after failure. Hence, the PEM may as a method to analyze the devices which fail after suffering momentary high voltage.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; failure analysis; gallium compounds; high electron mobility transistors; semiconductor device breakdown; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; EL image; HEMT reliability; OFF-state step-stress experiment; PEM; breakdown point; electroluminescence; failure analysis; high-electron mobility transistor; hot spots; photo emission microscope; reliability evaluation; spatial intensity distribution; Aluminum gallium nitride; Electric breakdown; Gallium nitride; HEMTs; Integrated circuit reliability; MODFETs; AlGaN/GaN; Failure analysis; HEMT; PEM; Reliability;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599164
