Capacitor dielectric defect or damage localization by photon emission microscopy with the combination of OBIRCH

Author

Chunlei Wu ; Suying Yao ; Song, Gilyoung ; Gaojie Wen ; Li Tian ; Miao Wu ; Diwei Fan

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2013

fDate

15-19 July 2013

Firstpage

280

Lastpage

283

Abstract

There are many failure analysis cases induced by the failed capacitor dielectric. The capacitor dielectric defect or damage is a common and important failure mechanism in failure analysis. Photon emission microscopy with the combination of OBIRCH are very effective to localize the failed spot in the capacitor dielectric, which can decrease analysis cycle time and improve success rates remarkably. In this paper, some different cases are presented to show how to locate the failed spot in a capacitor dielectric accurately and quickly by photon emission microscopy with the combination of OBIRCH.

Keywords

capacitors; failure analysis; OBIRCH combination; analysis cycle time; capacitor dielectric defect; damage localization; failed spot localization; photon emission microscopy; success rate improvement; Capacitors; Electrostatic discharges; Failure analysis; Integrated circuits; Microscopy; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599167

Filename

6599167