Title :
Capacitor dielectric defect or damage localization by photon emission microscopy with the combination of OBIRCH
Author :
Chunlei Wu ; Suying Yao ; Song, Gilyoung ; Gaojie Wen ; Li Tian ; Miao Wu ; Diwei Fan
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
Abstract :
There are many failure analysis cases induced by the failed capacitor dielectric. The capacitor dielectric defect or damage is a common and important failure mechanism in failure analysis. Photon emission microscopy with the combination of OBIRCH are very effective to localize the failed spot in the capacitor dielectric, which can decrease analysis cycle time and improve success rates remarkably. In this paper, some different cases are presented to show how to locate the failed spot in a capacitor dielectric accurately and quickly by photon emission microscopy with the combination of OBIRCH.
Keywords :
capacitors; failure analysis; OBIRCH combination; analysis cycle time; capacitor dielectric defect; damage localization; failed spot localization; photon emission microscopy; success rate improvement; Capacitors; Electrostatic discharges; Failure analysis; Integrated circuits; Microscopy; Photonics;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599167
