DocumentCode
633876
Title
A special failure analysis process to save some de-caped recovered cases
Author
Chunlei Wu ; Suying Yao ; Gaojie Wen ; Li Tian ; Miao Wu ; Diwei Fan ; Wang, W.
Author_Institution
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
fYear
2013
fDate
15-19 July 2013
Firstpage
445
Lastpage
448
Abstract
For some High power analog ICs, with a failure mode that some high side MOSFETs could not be turned on, they recovered after de-capsulation by fuming nitric acid, which resulted in the undetermined failure root cause. A hypothesis was proposed that there may be a foreign matter inducing gate short source in a high side MOSFET in the power die as there is no passivation covered the MOSFET. For confirming this hypothesis and avoiding recovering, a special failure analysis process was employed in a couple of cases. The hypothesis was confirmed and the failure mechanism was revealed thanks to this special failure analysis process.
Keywords
MOSFET; analogue integrated circuits; failure analysis; decaped recovered cases; failure analysis process; failure mode; gate short source; high power analog IC; high side MOSFET; power die; Compounds; Failure analysis; Integrated circuits; Logic gates; MOSFET; Metals; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599197
Filename
6599197
Link To Document