Title :
Dopant profiling using various FA techniques
Author :
Lim Chan Way ; Lim Siew Ping ; Lim Saw Sing
Author_Institution :
Infineon Technol. (Kulim) Sdn Bhd, Kedah Darul Aman, Malaysia
Abstract :
The paper outlines the applications of various FA techniques to identify any abnormality related to implantation. Such analysis is made possible through doping difference in semiconductors that produce observable image contrast. Method utilized includes SEM dopant contrast and wet stain method.
Keywords :
doping profiles; failure analysis; ion implantation; scanning electron microscopy; semiconductor device reliability; semiconductor doping; FA technique; SEM dopant contrast; device failure analysis; dopant profiling; doping difference; implantation abnormality; wet stain method; Decision support systems; Failure analysis; Integrated circuits;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599200
