Title :
A novel methodology for passive voltage contrast fault isolation on ultra thin gate oxide failure
Author :
Jinyu Tong ; Li, Kaicheng ; Gong, Excimer ; Qiang Guo
Author_Institution :
Failure Anal. Lab., Wuhan Xinxin Semicond. Manuf. Int. Corp. (XMC), Wuhan, China
Abstract :
As well-know, when doing the failure analysis, it is necessary to firstly locate the fault site, and traditional PVC is a popular method for fault localization. But when the cases come to the ultra-thin gate oxide failure, the traditional PVC is no longer an effective one since the difference in failure mechanism between the HV and LV gate oxide. In this paper, a novel method for ultra thin gate oxide failure analysis is proposed and a model is setup to explain the mechanism. Also in the practice application, the new method is verified and from the results we see that it can be a very effective method for fault localization on ultra-thin gate oxide failure analysis.
Keywords :
CMOS integrated circuits; failure analysis; fault location; integrated circuit reliability; integrated circuit testing; failure analysis; failure mechanism; fault localization; passive voltage contrast fault isolation; ultrathin gate oxide failure; Failure analysis; Integrated circuits;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599209
