Application of EMMI contrast method in failure analysis

Author

Xuanlong Chen ; Xianjun Kuang ; Guangning Xu

Author_Institution

Reliability Res. & Anal. Center, China CEPREI Lab., Guangzhou, China

fYear

2013

fDate

15-19 July 2013

Firstpage

504

Lastpage

507

Abstract

Photoemission microscope (EMMI) has been introduced in failure analysis of integrated circuits for a long time. By this technology, we can locate the failure site and confirm the failure mechanisms easily. However, there are considerable difficulties in determining test strategies and testability of fault localization when the circuit failed. In this paper, we proposed an EMMI contrast method in failure analysis of breakdown and current leakage. The contrast method mainly consists of I/V characteristic scan, quiescent bias testing and EMMI. Results indicate the method is efficient in ESD failure cases.

Keywords

electric breakdown; failure analysis; integrated circuit testing; photoelectron microscopy; EMMI contrast method; ESD failure; I-V characteristic scan; circuit failure; current leakage; failure analysis; failure mechanism; fault localization; integrated circuits; photoemission microscope; quiescent bias testing; Circuit faults; Electrostatic discharges; Failure analysis; Integrated circuits; Junctions; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599211

Filename

6599211