Title :
Study of process influences on the break down limit of high voltage transistors in an embedded EEPROM CMOS technology by using EMMI and nanoprobing
Author :
Acovic, Alexandre ; Dreybrodt, Joerg
Author_Institution :
EM Microelectron. Marin SA, Marin, Switzerland
Abstract :
High voltage transistors (HV) are key devices to achieve the required high programming voltages in charge pumps and HV interfaces of EEPROM memory cells used for RFID applications. The combined use of EMMI, nanoprobing and wafer in-line monitoring on test structures was used to investigate the limits of low Breakdown (BD) voltages of these transistors in an embedded EEPROM CMOS 0.35μm technology.
Keywords :
CMOS memory circuits; EPROM; charge pump circuits; power transistors; radiofrequency identification; BD voltage; EEPROM memory cells; EMMI; HV interfaces; HV transistors; RFID application; breakdown limit; charge pumps; embedded EEPROM CMOS technology; high-programming voltages; high-voltage transistors; nanoprobing; process influences; size 0.35 mum; test structures; wafer in-line monitoring; Field effect transistors; Implants; Junctions; Layout; Reflection; Resists;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599237
