Title :
Characteristic analysis of total dose irradiation annealing effect in SOI NMOSFET
Author :
He Yujuan ; Luo Hongwei ; En YunFei
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
Abstract :
The effect of total-dose irradiation annealing on SIMOX SOI MOSFET with different bias and temperature was studied. It has been demonstrated that the annealing effect was more remarkable with ON bias than the others and more obvious in high temperature than room temperature.
Keywords :
MOSFET; annealing; silicon-on-insulator; SIMOX SOI MOSFET; SOI NMOSFET; bias condition; silicon-on-insulator; temperature 293 K to 298 K; total dose irradiation annealing effect; Annealing; MOS devices; MOSFET circuits; Reliability; SOI device; bias condition; irradiation; total dose effect;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599266
