Title :
Design and simulation of high isolation RF MEMS shunt capacitor switch for C-K band
Author :
Mafinejad, Yasser ; Zarghami, M. ; Kouzani, Abbas Z.
Author_Institution :
Sch. of Eng., Deakin Univ., Geelong, VIC, Australia
Abstract :
Increasing the capacitance ratio in RF MEMS shunt capacitive switch will increase its RF performance but also raise its actuation voltage. To improve the RF performance of the switch without increasing its capacitance ratio, this paper explores two methods: reducing the LC resonance from the mm-wave into the X-band by using an inductive bridge, and using two short high impedance transmission lines at both ends of the CPW line. Accordingly, this paper presents the design and simulation of an electrostatic low actuation voltage and a very high isolation multipurpose switch with a very large bandwidth. The simulation results are presented and discussed.
Keywords :
LC circuits; bridge circuits; capacitor switching; coplanar transmission lines; coplanar waveguides; electrostatic actuators; microswitches; C-K band; CPW line; LC resonance reduction; X-band; capacitance ratio; electrostatic low actuation voltage; high isolation RF MEMS shunt capacitor switch; inductive bridge; two short high impedance transmission line; very high isolation multipurpose switch; Bridge circuits; Capacitance; Coplanar waveguides; Micromechanical devices; Microswitches; Radio frequency; RF MEMS switch; low actuation voltage; meander; short high impedance transmission line (SHITL);
Conference_Titel :
Electrical Engineering (ICEE), 2013 21st Iranian Conference on
Conference_Location :
Mashhad
DOI :
10.1109/IranianCEE.2013.6599661