A New Electroluminescent Organic Dual-Gate Field-Effect Transistor

Author

Colalongo, Luigi ; Torricelli, Fabrizio ; Kovacs-Vajna, Zsolt M.

Author_Institution

Dept. of Inf. Eng., Univ. of Brescia, Brescia, Italy

Volume

36

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

717

Lastpage

719

Abstract

In this letter, we show a new device architecture, which we call field-induced contacts light-emitting transistor (FICOLET), to fabricate high-efficiency electroluminescent dual-gate organic field-effect transistors. The FICOLET is a dual-gate transistor in which two accumulated regions, not completely overlapped, one of electrons and the other of holes, are formed. When a positive bias voltage is applied to the drain contact, electrons and holes are pushed by the combined action of the carrier diffusion and of the electric field to the opposite side of the semiconductor. They recombine far from the electrodes with a theoretical recombination efficiency of 100%, low exciton quenching, and current densities that, in high injection conditions, can exceed the lasing threshold.

Keywords

electric fields; electroluminescent devices; electrons; excitons; field effect transistors; semiconductor device manufacture; semiconductor device models; dual-gate transistor; electric field; electroluminescent organic dual-gate field-effect transistor; electrons; exciton quenching; field-induced contacts light-emitting transistor; high-efficiency electroluminescent dual-gate organic field-effect transistors; Charge carrier processes; Electric fields; Electrodes; Logic gates; Radiative recombination; Transistors; Dual gate transistor,; Laser; OLED; OTFT; dual gate transistor; laser;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2432852

Filename

7106487