DocumentCode
634323
Title
Table of contents
fYear
2013
fDate
5-6 June 2013
Firstpage
6
Lastpage
15
Abstract
The following topics are dealt with: transistor application technology; low-power ultrahigh-speed wireless communication; short-millimeter-wave CMOS technology; nanoimprinted-textured solar cell; ohmic contact formation; low temperature annealing; sputtering method; one-dimensional photonic crystal; bio-impedance measurement; digital ultrasonic sensors; power amplifier; small-scale inverter chains; and SRAM operation margin.
Keywords
CMOS integrated circuits; SRAM chips; invertors; low-power electronics; millimetre wave integrated circuits; photonic crystals; power amplifiers; radiocommunication; solar cells; sputtering; transistors; SRAM operation margin; bio-impedance measurement; digital ultrasonic sensors; dimensional photonic crystal; low temperature annealing; low-power ultrahigh-speed wireless communication; nanoimprinted-textured solar cell; ohmic contact formation; power amplifier; short-millimeter-wave CMOS technology; small-scale inverter chains; sputtering method; transistor application technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location
Suita
Print_ISBN
978-1-4673-6106-4
Type
conf
DOI
10.1109/IMFEDK.2013.6602218
Filename
6602218
Link To Document