• DocumentCode
    6356
  • Title

    Evaluation of a Pulsed Ultraviolet Light-Emitting Diode for Triggering Photoconductive Semiconductor Switches

  • Author

    Mauch, Daniel ; Hettler, Cameron ; Sullivan, William W. ; Neuber, Andreas A. ; Dickens, James

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA
  • Volume
    43
  • Issue
    7
  • fYear
    2015
  • fDate
    Jul-15
  • Firstpage
    2182
  • Lastpage
    2186
  • Abstract
    The power output, forward voltage, conversion efficiency, and spectral characteristics of a 365 nm ultraviolet light-emitting diode (LED) were measured for applications of triggering wide-bandgap photoconductive switches for pulsed power applications. Pulsed currents through the LED ranged from 125 mA up to 2.2 A at widths from 10 μs up to several seconds. Using time-resolved electroluminescence spectroscopy, peak emission was observed to occur at 368.5 nm for short pulses with a red-shift to 371.8 nm for pulses 8 s in duration. A peak light output of 4.1 W was measured for short pulses (<;50 μs) of 2.12 A, corresponding to six times the rated output specification. The LED was used to trigger a high-voltage photoconductive semiconductor switch (PCSS) at voltages up to 6 kV into a high-impedance load. The 365 nm LED is a promising candidate for optical triggering of PCSS devices.
  • Keywords
    electroluminescence; light emitting diodes; photoconducting switches; power semiconductor switches; red shift; wide band gap semiconductors; LED; current 2.12 A; photoconductive semiconductor switches; power 4.1 W; pulsed currents; pulsed power applications; pulsed ultraviolet light-emitting diode; red-shift; spectral characteristics; time 8 s; time-resolved electroluminescence spectroscopy; wavelength 365 nm; wavelength 368.5 nm; wavelength 371.8 nm; wide-bandgap photoconductive switches; Current measurement; Light emitting diodes; Optical devices; Optical pulses; Optical pumping; Optical switches; Silicon carbide; Light-emitting diode (LED); photoconducting devices; photoconductivity; power semiconductor switches; pulsed power; silicon carbide;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2015.2435744
  • Filename
    7151899