DocumentCode
636130
Title
Floating gate non volatile memory made from lead cadmium selenide nanocryatals
Author
Sahatiya, Parikshit
Author_Institution
Dept. of Phys. & Nanotechnol., SRM Univ., Kattankulathur, India
fYear
2013
fDate
24-26 July 2013
Firstpage
447
Lastpage
449
Abstract
Using colloidal chemistry it is possible to synthesize particles in nanometer regime. By changing the process parameters it is possible to control size and shape of nanoparticles. The paper deals with the synthesis of Lead Cadmium Selenide Nanocrystals using Polyol method and its proposed application in floating gate memory. With lead cadmium Selenide nanoparticles decrease in size of nanoparticles and capacitance was observed, which increases the charging energy. The voltage needed to store the charges in the floating gate calculated was in the range of 0.8V to 1V. The charges can be stored in the floating gate regions either by hot carrier injection or by Fowler-Nordheim (FN) tunneling, which correspond to logic “1” and release or erasing of the charges can be treated as logic “0”, which can be done by Ultraviolet(UV) emission or FN tunneling.
Keywords
MOSFET; cadmium compounds; colloids; hot carriers; lead compounds; nanofabrication; nanoparticles; particle size; tunnelling; ultraviolet spectra; FN tunneling; Fowler-Nordheim tunneling; PbCdSe; UV emission; capacitance; charging energy; colloidal chemistry; floating gate nonvolatile memory; hot carrier injection; lead cadmium selenide nanocrystal synthesis; nanometer regime; nanoparticle shape; nanoparticle size; polyol method; process parameters; ultraviolet emission; Indexes; Lead; Logic gates; Nanoparticles; Tunneling; AFM; Coulomb Blockade; FN Tunneling; Lead Cadmium Selenide; SEM; UV-VIS; XRD;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
Conference_Location
Chennai
Print_ISBN
978-1-4799-1377-0
Type
conf
DOI
10.1109/ICANMEET.2013.6609341
Filename
6609341
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