• DocumentCode
    636136
  • Title

    Numerical simulation of dry and wet oxidation of Silicon by TCAD Sprocess

  • Author

    Anusha, A. ; Parameswaran, Chithra ; Revathi, P. ; Velmurugan, V.

  • Author_Institution
    Center for Nanotechnolgy Res., VIT Univ., Vellore, India
  • fYear
    2013
  • fDate
    24-26 July 2013
  • Firstpage
    513
  • Lastpage
    516
  • Abstract
    The oxide thickness is of great concern today. The basic idea is to grow SiO2 layer on Silicon. The oxide is grown on intrinsic silicon substrate by thermal oxidation i.e., wet oxidation and dry oxidation. The thickness is compared for both the oxidation processes after different oxidation cycles. The capacitance per unit length is also calculated for the oxide growth in above. The percentage oxide thickness is also estimated and the oxide is found to grow more into the substrate with time and number of cycles.
  • Keywords
    elemental semiconductors; numerical analysis; oxidation; semiconductor growth; silicon; Si; TCAD process; dry oxidation; intrinsic silicon substrate; numerical simulation; oxide growth; oxide thickness; thermal oxidation; wet oxidation; Electronic publishing; Information services; Internet; Oxidation; Dry Oxidation; Massoud Model; Thickness; Wet Oxidation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4799-1377-0
  • Type

    conf

  • DOI
    10.1109/ICANMEET.2013.6609351
  • Filename
    6609351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=636136