Title :
Dopant induced changes in optical and structural properties of Cadmium Selenide nanoparticles
Author :
Goswami, Bhaswati ; Choudhury, Alamgir
Author_Institution :
Dept. of Phys., Tezpur Univ., Napaam, India
Abstract :
Cadmium Selenide (CdSe) nanoparticles are synthesized by a simple and cost effective one pot synthesis method and incorporated size selective precipitation to get powder samples. We have studied structural, morphological and optical properties by High resolution transmission electron microscope (HR-TEM), X-ray diffraction (XRD), Uv-vis reflectance spectra and photoluminescence spectra (PL). We have doped CdSe nanoparticles with Manganese (Mn2+) ions and saw the modifications in optical and morphological properties. Band gap and crystallite size of the nanoparticles are quite antiphonal to doping concentration. Calculated Urbach energies and Lattice parameters are also seemed to be changed with dopant concentration due to substitutional doping.
Keywords :
II-VI semiconductors; X-ray diffraction; cadmium compounds; doping profiles; lattice constants; manganese; nanofabrication; nanoparticles; optical constants; photoluminescence; precipitation (physical chemistry); semiconductor doping; semiconductor growth; transmission electron microscopy; ultraviolet spectra; visible spectra; wide band gap semiconductors; CdSe:Mn; HR-TEM; Urbach energies; Uv-vis reflectance spectra; X-ray diffraction; XRD; band gap; cadmium selenide nanoparticles; crystallite size; doping concentration; get powder samples; high-resolution transmission electron microscopy; lattice parameters; manganese ions; morphological properties; optical properties; photoluminescence spectra; precipitation; structural properties; Manganese; Microscopy; Optical microscopy; Optical reflection; Photonic band gap; Spectroscopy; Strain; CdSe; Manganese; doping;
Conference_Titel :
Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4799-1377-0
DOI :
10.1109/ICANMEET.2013.6609359
