DocumentCode
637623
Title
A simple method for extraction of threshold voltage of FD SOI MOSFETs
Author
Gluszko, Grzegorz ; Tomaszewski, Daniel ; Malesinska, Jolanta ; Kucharski, K.
Author_Institution
Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland
fYear
2013
fDate
20-22 June 2013
Firstpage
101
Lastpage
105
Abstract
Methods of a MOSFET threshold voltage extraction have been briefly described. A possibility of their application for characterization of a fully-depleted SOI MOSFETs has been discussed. A simple method for SOI MOSFET threshold voltage characterization has been proposed. The concept has been verified based on experimental data obtained for SOI MOSFETs manufactured in ITE.
Keywords
MOSFET; semiconductor device models; silicon-on-insulator; FD SOI MOSFET threshold voltage characterization; ITE; MOSFET threshold voltage extraction; experimental data; fully-depleted SOI MOSFET; CMOS integrated circuits; Data mining; Logic gates; MOSFET; Silicon; Substrates; Threshold voltage; CMOS; Fully-depleted SOI; Parameter extraction; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference
Conference_Location
Gdynia
Print_ISBN
978-83-63578-00-8
Type
conf
Filename
6613321
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