Design of CMOS analog integrated readout circuit for NMOS THz detectors

Author

Kolacinski, Cezary ; Obrebski, D.

Author_Institution

ICs & Syst. Design Dept., Inst. of Electron Technol., Warsaw, Poland

fYear

2013

fDate

20-22 June 2013

Firstpage

222

Lastpage

228

Abstract

This paper describes design of readout circuit destined for NMOS terahertz detectors. The proposed architecture bases on chopper amplifier and instrumentation amplifier concepts. The main goals were to achieve high gain (max. 100 dB) and to enable proper operation with NMOS-based THz detector. For the research needs three different architectures of chopper amplifier have been developed. The designed chip was fabricated in well-known AMS C35 process (350 nm feature size). Another issue described in this paper is dedicated testing environment. At the end a few measurement results are shown.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; instrumentation amplifiers; integrated circuit design; terahertz wave detectors; AMS C35 process; CMOS analog integrated readout circuit design; NMOS THz detectors; NMOS terahertz detectors; chopper amplifier; instrumentation amplifier; Choppers (circuits); Detectors; Gain; Instruments; Noise; Transistors; Voltage control; AMS C35; Programmable Gain Amplifier; Voltage Controlled Amplifier; chopper amplifier; instrumentation amplifier; readout circuit; terahertz detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference

Conference_Location

Gdynia

Print_ISBN

978-83-63578-00-8

Type

conf

Filename

6613345