Analysis in commutation of a new high voltage thyristor structure for high temperature

In this paper, a high voltage thyristor structure using Schottky contacts on the anode side is analysed through 2D physical simulations in terms of switching performances. The replacement of the P emitter of a standard symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward direction and hence improves the forward blocking voltage at high temperature while maintaining its reverse blocking capability. It is shown by comparing this structure with a conventional thyristor, that the presence of Schottky contact does not degrade the turn-on process. It is also shown that the presence of Schottky contact increase the recovery speed of the device during turn-off, improving the maximum operating frequency of the device.