Title :
SiC power JFET electrothermal macromodel
Author :
Masana, Francesc ; Chavarria, Javier ; Biel, Domingo ; Poveda, Alberto ; Guinjoan, Francesc ; Alarcon, Eduard
Author_Institution :
Dept. of Electron. Eng. (DEE), Polytech. Univ. of Catalunya (UPC), Barcelona, Spain
Abstract :
This paper presents a SiC JFET model comprising static, dynamic and thermal features built from SPICE Analog Behavioral Modeling (ABM) controlled sources. The model is parameterized in such a way that data sheet information is enough to set it to work. The model complexity is not very high and allows for reasonably long simulation times to cope with the rather slow self heating process and still maintain enough accuracy for practical purposes.
Keywords :
SPICE; junction gate field effect transistors; power field effect transistors; process heating; semiconductor device models; silicon compounds; wide band gap semiconductors; ABM controlled source; SPICE analog behavioral modeling controlled source; SiC; data sheet information; power JFET electrothermal macromodel; self heating process; Data models; Integrated circuit modeling; JFETs; Junctions; Mathematical model; SPICE; Silicon carbide; ABM; RC thermal model; SiC JFET; carrier mobility; self heating; voltage controlled capacitance;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference
Conference_Location :
Gdynia
Print_ISBN :
978-83-63578-00-8
