Electrical Properties in Group IV Elements-Doped ZnO Thin-Film Transistors

Author

Zhe Li ; Lei Xu ; Abliz, Ablat ; Yang Hua ; Jinchai Li ; Ying Shi ; Wei Liu ; Lei Liao

Author_Institution

Dept. of Phys., Wuhan Univ., Wuhan, China

Volume

11

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

670

Lastpage

673

Abstract

The group IV elements doped ZnO thin-film transistors (TFTs) were deposited by radio-frequency magnetron sputtering on SiO2/Si substrates at 150 ^°C. The influence of the dopant concentrations on the device performance was examined. Device characteristics such as threshold voltage (VTH) were modulated and field effect mobility and saturated current could be enhanced by tuning dopant concentration. Moreover, the negative bias stress was applied so that the reliability of the TFTs could be evaluated, the shift of VTH for Ge-doped TFTs is smaller than that of other TFTs, and therefore, Ge doping may help to improve the bias stability of ZnO TFTs.

Keywords

II-VI semiconductors; carrier mobility; germanium; semiconductor device reliability; semiconductor doping; silicon; silicon compounds; sputtering; thin film transistors; wide band gap semiconductors; zinc compounds; Ge; Si; SiO₂; TFT reliability; ZnO; dopant concentration; electrical property; field effect mobility; germanium doping; group IV element; negative bias stress; radiofrequency magnetron sputtering; saturated current; temperature 150 C; thin-film transistor; threshold voltage; Doping; Films; Logic gates; Silicon; Stress; Thin film transistors; Zinc oxide; Group IV elements; ZnO; thin-film transistors (TFTs); threshold voltage;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2432857

Filename

7106545