• DocumentCode
    638384
  • Title

    Intrinsically switchable thin film ferroelectric resonators utilizing electric field induced piezoelectric effect

  • Author

    Sis, Seyit Ahmet ; Lee, Victor ; Seungku Lee ; Mortazawi, Amir

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents bulk acoustic wave resonators using the ferroelectric materials barium titanate and barium strontium titanate. The electric field induced piezoelectric effect in these materials is utilized in the design of various types of intrinsically switchable bulk acoustic wave resonators. Both thickness mode and lateral mode resonator results, which have been demonstrated recently, are summarized in this paper. Significantly improved quality factors by means of forming a ferroelectric-on-silicon structure are also demonstrated.
  • Keywords
    acoustic resonators; barium compounds; bulk acoustic wave devices; ferroelectric devices; ferroelectric materials; ferroelectric thin films; strontium compounds; switches; thin film devices; Ba1-xSrxTiO3; BaTiO3; barium strontium titanate; barium titanate materials; bulk acoustic wave resonators; electric field induced piezoelectric effect; ferroelectric materials; ferroelectric-on-silicon structure; switchable thin film ferroelectric resonators; Barium; Electrodes; Film bulk acoustic resonators; Filter banks; Resonant frequency; Silicon; Switches; Barium strontium titanate; barium titanate; composite FBAR; ferroelectric devices; intrinsically switchable devices; thin film bulk acoustic wave resonators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Symposium (IWS), 2013 IEEE International
  • Conference_Location
    Beijing
  • Type

    conf

  • DOI
    10.1109/IEEE-IWS.2013.6616787
  • Filename
    6616787