Title :
Intrinsically switchable thin film ferroelectric resonators utilizing electric field induced piezoelectric effect
Author :
Sis, Seyit Ahmet ; Lee, Victor ; Seungku Lee ; Mortazawi, Amir
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
This paper presents bulk acoustic wave resonators using the ferroelectric materials barium titanate and barium strontium titanate. The electric field induced piezoelectric effect in these materials is utilized in the design of various types of intrinsically switchable bulk acoustic wave resonators. Both thickness mode and lateral mode resonator results, which have been demonstrated recently, are summarized in this paper. Significantly improved quality factors by means of forming a ferroelectric-on-silicon structure are also demonstrated.
Keywords :
acoustic resonators; barium compounds; bulk acoustic wave devices; ferroelectric devices; ferroelectric materials; ferroelectric thin films; strontium compounds; switches; thin film devices; Ba1-xSrxTiO3; BaTiO3; barium strontium titanate; barium titanate materials; bulk acoustic wave resonators; electric field induced piezoelectric effect; ferroelectric materials; ferroelectric-on-silicon structure; switchable thin film ferroelectric resonators; Barium; Electrodes; Film bulk acoustic resonators; Filter banks; Resonant frequency; Silicon; Switches; Barium strontium titanate; barium titanate; composite FBAR; ferroelectric devices; intrinsically switchable devices; thin film bulk acoustic wave resonators;
Conference_Titel :
Wireless Symposium (IWS), 2013 IEEE International
Conference_Location :
Beijing
DOI :
10.1109/IEEE-IWS.2013.6616787
