DocumentCode
638384
Title
Intrinsically switchable thin film ferroelectric resonators utilizing electric field induced piezoelectric effect
Author
Sis, Seyit Ahmet ; Lee, Victor ; Seungku Lee ; Mortazawi, Amir
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2013
fDate
14-18 April 2013
Firstpage
1
Lastpage
4
Abstract
This paper presents bulk acoustic wave resonators using the ferroelectric materials barium titanate and barium strontium titanate. The electric field induced piezoelectric effect in these materials is utilized in the design of various types of intrinsically switchable bulk acoustic wave resonators. Both thickness mode and lateral mode resonator results, which have been demonstrated recently, are summarized in this paper. Significantly improved quality factors by means of forming a ferroelectric-on-silicon structure are also demonstrated.
Keywords
acoustic resonators; barium compounds; bulk acoustic wave devices; ferroelectric devices; ferroelectric materials; ferroelectric thin films; strontium compounds; switches; thin film devices; Ba1-xSrxTiO3; BaTiO3; barium strontium titanate; barium titanate materials; bulk acoustic wave resonators; electric field induced piezoelectric effect; ferroelectric materials; ferroelectric-on-silicon structure; switchable thin film ferroelectric resonators; Barium; Electrodes; Film bulk acoustic resonators; Filter banks; Resonant frequency; Silicon; Switches; Barium strontium titanate; barium titanate; composite FBAR; ferroelectric devices; intrinsically switchable devices; thin film bulk acoustic wave resonators;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Symposium (IWS), 2013 IEEE International
Conference_Location
Beijing
Type
conf
DOI
10.1109/IEEE-IWS.2013.6616787
Filename
6616787
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