DocumentCode
638714
Title
Graphene FETs: Issues and prospects
Author
Suemitsu, M.
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
2013
fDate
2-5 July 2013
Firstpage
59
Lastpage
62
Abstract
Current status and future outlook of graphene-based FETs (GFETs) have been reviewed. While its digital applications may find various challenges due mainly from the lack of the band gap, analog (RF) applications should be promising for GFETs. To fully enjoy the excellent transport properties of intrinsic graphene, we need to fully develop extrinsic technologies such as choice of the substrate, gate insulator, metal electrodes.
Keywords
energy gap; field effect transistors; fullerene devices; graphene; C; analog applications; band gap; gate insulator; graphene FET; metal electrodes; transport properties; Field effect transistors; Graphene; Logic gates; Metals; Quantum capacitance; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location
Kyoto
Type
conf
Filename
6617777
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