A simple pixel structure to compensate non-uniform threshold voltage and mobility of Poly-Si TFTs for large-size AMOLED displays

Author

Jun-Seok Na ; Oh-Kyong Kwon

Author_Institution

Dept. of Electron. Eng., Hanyang Univ., Seoul, South Korea

fYear

2013

fDate

2-5 July 2013

Firstpage

91

Lastpage

94

Abstract

A simple pixel structure for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using poly-crystalline silicon (Poly-Si) thin film transistor (TFT) backplane is proposed. The proposed pixel structure can compensate threshold voltage and mobility variations of TFTs. The simulated emission current error range of the proposed pixel structure is from -2.57 LSB to 2.25 LSB when threshold voltage and mobility variations of driving TFT are ±0.5 V and ±10%, respectively. It is expected that the proposed pixel structure will be an effective solution for threshold voltage and mobility variations problem of poly-si TFTs in AMOLED displays.

Keywords

LED displays; elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; Si; active matrix organic light-emitting diode displays; emission current error range; large-size AMOLED displays; mobility variations; nonuniform threshold voltage; poly-crystalline silicon thin film transistor backplane; polySi TFT; simple pixel structure; Active matrix organic light emitting diodes; Anodes; Capacitors; Programming; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617785