Emission duty extension pixel structure for high-resolution active matrix organic light emitting diode displays

Author

You-Na Jang ; Oh-Kyong Kwon

Author_Institution

Dept. of Electron. Eng., Hanyang Univ., Seoul, South Korea

fYear

2013

fDate

2-5 July 2013

Firstpage

99

Lastpage

102

Abstract

A pixel structure for high resolution of the active matrix orgarnic light emitting diode (AMOLED) displays using a poly-Si thin film transistor (TFT) backplane is proposed. The proposed pixel structure compensates the electrical characteristic variations of driving TFTs for all pixels simultaneously for increasing the emission duty and reducing the power consumption. The emission duty of the proposed pixel is increased to 91.3% compared to the conventional pixel and the emission current error ranges from -3.08% to 3.14%. The power consumption of the proposed pixel structure decreases to 10.1%, compared to the conventional pixel.

Keywords

LED displays; elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; AMOLED displays; Si; electrical characteristic variations; emission current error; emission duty extension pixel structure; high-resolution active matrix organic light emitting diode displays; poly-Si thin film transistor backplane; power consumption; Active matrix organic light emitting diodes; Power demand; Programming; Simulation; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617787