Reliability of amorphous InGaZnO thin film transistors passivated by polysilsesquioxane-based passivation layer

Author

Bermundo, Juan Paolo ; Ishikawa, Yozo ; Yamazaki, Hiroshi ; Nonaka, Tomomi ; Uraoka, Y.

Author_Institution

Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan

fYear

2013

fDate

2-5 July 2013

Firstpage

129

Lastpage

132

Abstract

We report the fabrication of highly reliable amorphous InGaZnO (a-IGZO) passivated by a polysilsesquioxane-based passivation layer using a simple solution process. Results show that a copolymer of methylsilsesquioxane and phenylsilsesquioxane is an effective passivation layer. A-IGZO thin film transistors (TFT) passivated by this copolymer showed a small threshold voltage (V_th) shift during positive bias stress (PBS), suppression of the hump effect during negative bias stress (NBS) and a minimal V_th shift (~ - 0.6 V) during negative bias illumination stress (NBIS). These results demonstrate the potential of easy to fabricate polysilsesquioxane-based passivation layers as effective passivation layer materials.

Keywords

amorphous semiconductors; gallium compounds; indium compounds; liquid phase deposition; passivation; polymer blends; semiconductor device reliability; semiconductor growth; semiconductor thin films; ternary semiconductors; thin film transistors; zinc compounds; InGaZnO; amorphous thin film transistors; copolymer; hump effect; methylsilsesquioxane; negative bias illumination stress; passivation; phenylsilsesquioxane; polysilsesquioxane-based passivation layer; positive bias stress; reliability; solution process; threshold voltage shift; Logic gates; Materials; NIST; Passivation; Reliability; Stress; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617795