Properties of pentacene films prepared by heated metal mesh

Bulk-phase pentacene film and novel pentacene based organic semiconductor film were prepared by using heated metal mesh. In this method, a heated tungsten (W) mesh set between pentacene source and substrate in vacuum chamber. Pentacene molecules come in contact with a heated W mesh before reaching the substrate and the pentacene molecules can be obtained the thermal energy on a heated W mesh. As the mesh temperature increased from 23 to 1200°C, the intensity ratio of bulk to thin-film phase increased from 0 to 9.7. The decomposition reaction occurs notably above 1300°C. The decomposed precursors were identified to be dihydropentacene, p-distrylbenzene, and 2,2´-dimethyl-1,1´-binaphthalene. These decomposed precursors are expected as a source of large graphene sheets and graphene nanoribbons.