Title :
Minority carrier annihilation at crystalline silicon surface in MOS structure
Author :
Furukawa, Jun-ichiro ; Yoshidomi, Shinya ; Hasumi, Masahiko ; Sameshima, Takeru
Author_Institution :
Fac. of Eng., Tokyo Univ. of Agric. & Technol., Koganei, Japan
Abstract :
Photo-induced minority carrier annihilation properties at the silicon surface in metal-oxide-semiconductor (MOS) structure were reported using a 9.35 GHz microwave transmittance measurement. Al electrodes were formed with a size of 0.1 × 2.0 cm2 at the top surface and with a half area at the rear surface of 12-Ωcm-n-type 500-μm-thick crystalline silicon substrates coated with 100-nm-thick thermally grown SiO2 layers. The bias voltage was applied to the Al electrode at the top surface. We observed microwave absorption by photo-induced carriers laterally diffusing into the silicon region placed in the microwaveguide tube through the region coated with the Al electrode from 635 nm light illumination region outside of the waveguide tube. The microwave absorption resulted in that the carrier recombination defect density at the top silicon surface increased from 2.3×1010 to 4.8×1010 cm-2 as the bias voltage decreased from 0 to -2.0 V.
Keywords :
MIS structures; aluminium; carrier lifetime; elemental semiconductors; microwave spectra; minority carriers; silicon; silicon compounds; surface recombination; Al-SiO2-Si; MOS structure; Si; bias voltage; carrier recombination defect density; crystalline silicon substrates; crystalline silicon surface; frequency 9.35 GHz; light illumination; metal-oxide-semiconductor structure; microwave absorption; microwave transmittance measurement; microwaveguide tube; photoinduced carrier lateral diffusion; photoinduced minority carrier annihilation; size 100 nm; size 500 mum; thermally grown layers; voltage 0 V to -2 V; wavelength 635 nm; Electrodes; Electron tubes; Microwave measurement; Microwave theory and techniques; Silicon; Surface treatment; Surface waves;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto