High performance poly-Si thin film transistor with one-dimensionally long Si grains using DLB continuous-wave laser lateral crystallization

Author

Yamano, Masayuki ; Kuroki, Shin-Ichiro ; Sato, Takao ; Kotani, Koji

Author_Institution

Res. Inst. for Nanodevice & Bio Syst., Hiroshima Univ. (RNBS), Higashi-Hiroshima, Japan

fYear

2013

fDate

2-5 July 2013

Firstpage

199

Lastpage

202

Abstract

One-dimensionally very large silicon grains with a length of over 100 μm were formed by continuous-wave laser crystallization with double-line spot. The laterally crystallized Si thin films have a preferential orientation of (110) plane. Poly-Si TFTs with one-dimensionally long silicon grains were also fabricated with low-temperature (≤550°C), metal gate self-aligned process. And high electron field effect mobility of 450 cm²/Vs was achieved.

Keywords

crystallisation; electron mobility; elemental semiconductors; laser materials processing; semiconductor thin films; silicon; thin film transistors; (110) orientation; DLB continuous-wave laser lateral crystallization; Si; continuous-wave laser crystallization; double-line spot; electron field effect mobility; high performance poly-Si thin film transistor; laterally crystallized thin films; one-dimensionally long grains; Crystallization; Laser beams; Lasers; Logic gates; Measurement by laser beam; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617815