Control of drain induced barrier lowering in short channel poly-Si TFTs for AMOLED displays

Author

Ki Yeol Byun ; Seunghyun Jang ; Byung-Taek Son ; Yong-Ho Yang ; Yongsoo Lee ; Yeon-Tae Kim ; Hyunwoo Cho ; Moon-Hyun Yoo

Author_Institution

Display R&D Center, Samsung Display, Yongin, South Korea

fYear

2013

fDate

2-5 July 2013

Firstpage

203

Lastpage

206

Abstract

In this work, we investigate the impact of drain induced barrier lowering on threshold voltage variation in short channel polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified TFT structure with short channel are designed to enhance the pixel performance for active-matrix organic light-emitting diode (AMOLED) displays. Numerical analysis combining 2-D device simulation and statistical pixel modeling shows that proposed p-type TFT structures can realize less threshold voltage deviation with high immunity of short channel effect, which is suitable for the current-driven device such as organic light-emitting diode (OLED).

Keywords

LED displays; elemental semiconductors; organic light emitting diodes; semiconductor device models; silicon; thin film transistors; 2-D device simulation; AMOLED displays; Si; active-matrix organic light-emitting diode displays; drain induced barrier lowering; numerical analysis; p-type TFT structures; short channel poly-Si TFT; statistical pixel modeling; threshold voltage variation; Active matrix organic light emitting diodes; Integrated circuit modeling; Logic gates; Performance evaluation; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617816