Characteristic deviation of excimer-laser crystallized poly-Si thin-film transistors and layout design of operational amplifiers

Author

Kimura, Mizue ; Morii, Shota ; Ono, Yuto ; Ito, Yu ; Matsuda, Tadamitsu

Author_Institution

Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan

fYear

2013

fDate

2-5 July 2013

Firstpage

207

Lastpage

210

Abstract

The characteristic deviation of excimer-laser crystallized (ELC) poly-Si thin-film transistors (TFTs) with wide channel is compared between TFTs with channel regions parallel to laser shots (parallel TFTs) and TFTs with channel regions perpendicular to laser shots (perpendicular TFTs). It is found that the characteristic deviation is smaller for perpendicular TFTs. Moreover, layout design of operational amplifiers (OPAMPs) is investigated. It is found that the amplifying characteristic is quite different between the OPAMPs consisting of parallel and perpendicular TFTs. However, the influence from the characteristic difference can be reduced using a feedback circuit.

Keywords

crystallisation; elemental semiconductors; excimer lasers; operational amplifiers; semiconductor device models; silicon; thin film transistors; Si; amplifying characteristic; characteristic deviation; characteristic difference; excimer-laser crystallized Poly-Si thin-film transistors; feedback circuit; laser shots; layout design; operational amplifiers; Films; Lasers; Layout; Logic gates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617817