DocumentCode
63910
Title
Achieving High Field-Effect Mobility Exceeding 50 cm 
/Vs in In-Zn-Sn-O Thin-Film Transistors
Author
Ji Hun Song ; Kwang Suk Kim ; Yeon Gon Mo ; Rino Choi ; Jae Kyeong Jeong
Author_Institution
Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea
Volume
35
Issue
8
fYear
2014
fDate
Aug. 2014
Firstpage
853
Lastpage
855
Abstract
Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited a high mobility exceeding 52 cm2/Vs, a low subthreshold gate swing of 0.2 V/decade, a threshold voltage of 0.1 V, and an ION/OFF ratio of >2 × 108. The stability of the oxide passivated device under the positive and negative bias stress conditions was superior to that of the nitride passivated device, which can be attributed to the lower trap density in the channel layer.
Keywords
etching; field effect transistors; indium compounds; passivation; thin film transistors; zinc compounds; InZnSnO; TFT; bottom gate etch stopper-type thin-film transistor; field-effect mobility; negative bias stress condition; nitride passivated device; oxide passivated device stability; positive bias stress condition; trap density; voltage 0.1 V; Hydrogen; Logic gates; NIST; Passivation; Thin film transistors; Tin; Indium zinc tin oxide semiconductor; high mobility; hydrogen; nitride film; passivation; thin-film transistors; thin-film transistors.;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2329892
Filename
6840993
Link To Document